digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MR2000 series medi um current silicon rectifiers maximum ratings ratings symbol mr 2000 mr 2001 mr 2002 mr 2004 mr 2006 mr 2008 mr 2010 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 volts non-repetitive peak reverse voltage (half-wave, single phase, 60hz peak) v rsm 60 120 240 480 720 960 1200 volts rms forward current i (rms) 40 amps average rectified forward current (single phase, resistive load, 60hz, t c = 150c) i o 20 amps non-repetitive peak surge current (surge applied @ rated load conditions, half wave, single phase, 60hz) i fsm 400(1 cycle) amps operating and storage temperature range t j , t stg -65 to +175 c thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 1.3 c/w electrical characteristics characteristic symbol maximum unit maximum instantaneous forward voltage (i f = 63a, t c = 25c) v f 1.1 volts maximum reverse current (rated dc voltage) t c = 25c t c = 100c i r 100 500 a sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121127
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MR2000 series medi um current silicon rectifiers duty cycle = d = t p /t 1 peak power = p pk is peak of an equivalent square power pulse to determine maximum junction temperature of the diode in a given situation the following procedure is recommended: the temperature of the case should be measured using a th ermocouple placed on the case at the temperature reference point. the thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady state conditions are achieved. using the measured value of t c the junction temperature may be determined by: t j = t c + t jc , where t jc is the increase in junction temperature above the case temperature. it may be determined by t jc = p pk r ?jc [d + (1-d) r(t r +t p ) ?r(t 1 )] where r(t) = normalized value of transient thermal resistance at time t from figure 6, and r(t 1 +t p ) = normalized value of transient thermal resistance at time t 1 +t p . sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121127
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MR2000 series medi um current silicon rectifiers as the frequency of the input si gnal is increased, the reverse recovery time of the diode (figure 9) becomes significant, resulting in an increasing ac voltage component across r l which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor, , as shown in figure 10. it should be emphasized that figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. data was obtained by me asuring the ac component of v o with a true rms ac voltmeter and the dc component with a dc voltmeter. the data was used in equation 1 to obtain points for figure 10 . sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121127
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MR2000 series medi um current silicon rectifiers mechanical characteristics case do-4(r) marking alpha-numeric normal polarity cathode is stud reverse polarity anode is stud (add ?r? suffix) do-4(r) inches millimeters min max min max a - 0.078 - 1.981 b 0.422 0.453 10.719 11.506 c - 0.405 - 10.287 d - 0.800 - 20.320 e 0.420 0.440 10.668 11.176 f - 0.250 - 6.350 g - 0.424 - 10.770 h 0.066 - 1.676 - available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121127
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